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Transistor
2SC2206
Silicon NPN epitaxial planer type
For high-frequency amplification Complementary to 2SA1254
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO CEBO IC PC Tj Tstg
(Ta=25C)
Ratings 30 20 5 30 400 150 -55 ~ +150 Unit V V V mA mW C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
EIAJ:SC-71 M Type Mold Package
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Common emitter reverse transfer capacitance Reverse transfer impedance
(Ta=25C)
Symbol VCBO VCEO VEBO hFE
*
Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -1mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA VCB = 10V, IE = -1mA, f = 200MHz VCB = 10V, IE = -1mA, f = 5MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -1mA, f = 2MHz
min 30 20 5 70
typ
max
4.10.2
Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.4
1.00.1
R
0.
4.50.1
7
Unit V V V
220 0.1 0.7 V V MHz 4 1.5 50 dB pF
VCE(sat) VBE fT NF Cre Zrb
150
300 2.8
*h
FE
Rank classification
B 70 ~ 140 C 110 ~ 220 hFE
Rank
1
Transistor
PC -- Ta
500 12 Ta=25C 450 10 IB=100A 12.5
2SC2206
IC -- VCE
15.0 VCE=10V Ta=25C
IC -- I B
Collector power dissipation PC (mW)
Collector current IC (mA)
350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160
8
80A
Collector current IC (mA)
18
400
10.0
6
60A
7.5
4
40A
5.0
2
20A
2.5
0 0 6 12
0 0 20 40 60 80 100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (A)
IB -- VBE
120 VCE=10V Ta=25C 100 50 60
IC -- VBE
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 VCE=10V
VCE(sat) -- IC
IC/IB=10
Collector current IC (mA)
Base current IB (A)
80
40 Ta=75C 30
25C
-25C
60
Ta=75C 0.3 25C 0.1 0.03 0.01 0.1 -25C
40
20
20
10
0 0 0.2 0.4 0.6 0.8 1.0
0 0 0.4 0.8 1.2 1.6 2.0
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE -- IC
240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 - 0.1 - 0.3
fT -- I E
60 VCB=10V 6V
Zrb -- IE
Reverse transfer impedance Zrb ()
Ta=25C VCB=10V f=2MHz Ta=25C
Forward current transfer ratio hFE
200
Transition frequency fT (MHz)
50
160
Ta=75C 25C
40
120 -25C 80
30
20
40
10
0.3
1
3
10
30
100
-1
-3
-10
-30
-100
0 - 0.1
- 0.3
-1
-3
-10
Collector current IC (mA)
Emitter current IE (mA)
Emitter current IE (mA)
2
Transistor
Cre -- VCE
Common emitter reverse transfer capacitance Cre (pF)
3.0 f=10.7MHz Ta=25C 2.5 20 24
2SC2206
PG -- IE
f=100MHz VCE=10V Ta=25C 12 VCB=6V f=100MHz Rg=50 Ta=25C
NF -- IE
10
2.0 IC=3mA 1.5 1mA
16
Noise figure NF (dB)
-1 -3 -10 -30 -100
Power gain PG (dB)
8
12
6
1.0
8
4
0.5
4
2
0 0.1
0.3
1
3
10
30
100
0 - 0.1 - 0.3
0 - 0.1
- 0.3
-1
-3
-10
Collector to emitter voltage VCE (V)
Emitter current IE (mA)
Emitter current IE (mA)
bie -- gie
24 0
bre -- gre
Reverse transfer susceptance bre (mS)
yie=gie+jbie VCE=10V yre=gre+jbre VCE=10V
bfe -- gfe
Forward transfer susceptance bfe (mS)
f=10.7MHz 0
- 0.1mA f=10.7MHz 58 10.7
-1mA 100
Input susceptance bie (mS)
20 -4mA 16
IE=-1mA
10- 0.1 IE=-1mA
-20
58 -2mA 100
-7mA 100
-2mA
58
- 0.2
-40
12
- 0.3
58
-60
IE=-4mA 100 58
8 f=10.7MHz 4
- 0.4
100
-80
- 0.5
-100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100
0 0 8 16 24 32 40
- 0.6 - 0.5
-120 - 0.4 - 0.3 - 0.2 - 0.1 0
Input conductance gie (mS)
Reverse transfer conductance gre (mS)
Forward transfer conductance
gfe (mS)
boe -- goe
1.2 yoe=goe+jboe VCE=10V
Output susceptance boe (mS)
1.0
0.8
IE=-1mA 100
0.6 58 0.4
0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5
Output conductance goe (mS)
3
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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